Display device

ABSTRACT

A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of application Ser. No. 16/244,484,filed Jan. 10, 2019, which is a Continuation of application Ser. No.15/617,191, filed Jun. 8, 2017 (now U.S. Pat. No. 10,217,678, issued onFeb. 26, 2019), which claims the benefit of U.S. Provisional ApplicationNo. 62/350,169, filed Jun. 14, 2016, U.S. Provisional Application No.62/355,392, filed Jun, 28, 2016, U.S. Provisional Application No.62/361,543, filed Jul. 13, 2016, and U.S. Provisional Application No.62/394,225, filed Sep. 14, 2016, and claims priority of China PatentApplication No. 201710103986.9, filed Feb. 24, 2017, the entirety ofwhich are incorporated by reference herein.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to display devices, and in particular to a displaydevice with light-emitting elements.

Description of the Related Art

As digital technology develops, display devices are being used morewidely in many aspects of daily life, such as in televisions, notebookcomputers, computers, cell phones, smartphones, and other moderninformation devices. Also, display devices are continuously beingdeveloped to be lighter, thinner, smaller and more fashionable thanprevious generations. These display devices include light-emitting diodedisplay devices.

Light-emitting diodes (LEDs) generate electromagnetic radiation (forexample, light) by applying the recombination of an electron-hole pairin a p-n junction. In a forward bias p-n junction formed of direct bandgap material such as GaAs or GaN, electromagnetic radiation is generatedby the recombination of electron-hole pairs pouring into a depletionregion. The electromagnetic radiation may be in the visible light regionor the invisible light region, and LEDs of different colors are formedof materials with different energy gaps.

Nowadays, LEDs for the display device industry are trending towards massproduction, and any reduction in the production cost of LED displaydevices may bring a significant beneficial economic effect. However,existing display devices are not satisfactory in every aspect.

Therefore, a display device that can increase display quality or reducethe production cost is still required in the industry.

BRIEF SUMMARY OF THE INVENTION

Some embodiments of the disclosure provide a display device, including:a substrate, a light-emitting element, and a transistor. The substratehas a top surface. The light-emitting element is disposed on thesubstrate, and includes a first electrode and a second electrode. Thetransistor is disposed on the substrate and electrically connected tothe light-emitting element. The transistor includes a gate electrode anda semiconductor layer. The semiconductor layer includes an overlappingportion overlapped with the gate electrode. The first electrode and thesecond electrode of the light-emitting element do not overlap with theoverlapping portion along a direction perpendicular to the top surfaceof the substrate.

To clarify the features and advantages of the present disclosure, adetailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure can be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1A is a cross-sectional view of a display device in accordance withsome embodiments.

FIG. 1B is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 1C-1 is a cross-sectional view of a display device in accordancewith some other embodiments.

FIG. 1C-2 is a cross-sectional view of a display device in accordancewith some other embodiments.

FIG. 1D is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 1E is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 1F is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 2A is a top view illustrating one of the steps of the method formanufacturing a display device in accordance with some embodiments.

FIG. 2B is a top view illustrating one of the steps of the method formanufacturing a display device in accordance with some embodiments.

FIG. 2C is a top view illustrating one of the steps of the method formanufacturing a display device in accordance with some embodiments.

FIG. 2D is a cross-sectional view illustrating one of the steps of themethod for manufacturing a display device in accordance with someembodiments.

FIG. 3 is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 4A is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 4B is a top view of a display device in accordance with some otherembodiments.

FIG. 4C is a cross-sectional view of a display device in accordance withsome other embodiments.

FIG. 5A is a cross-sectional view illustrating an imprinting die in oneof the steps of the method for manufacturing a display device inaccordance with some embodiments.

FIG. 5B is a cross-sectional view illustrating an imprinting die in oneof the steps of the method for manufacturing a display device inaccordance with some embodiments.

FIG. 5C is a cross-sectional view illustrating an imprinting die in oneof the steps of the method for manufacturing a display device inaccordance with some embodiments.

FIG. 5D is a cross-sectional view illustrating an imprinting die in oneof the steps of the method for manufacturing a display device inaccordance with some embodiments.

FIG. 5E is a cross-sectional view illustrating an imprinting die in oneof the steps of the method for manufacturing a display device inaccordance with some other embodiments.

FIG. 5F is a cross-sectional view illustrating an imprinting die and asubstrate in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 5G is a cross-sectional view illustrating an imprinting die and asubstrate in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 6A is a cross-sectional view illustrating the spray coatingequipment and a substrate in one of the steps of the method formanufacturing a display device in accordance with some otherembodiments.

FIG. 6B is a cross-sectional view illustrating the spray coatingequipment and a substrate in one of the steps of the method formanufacturing a display device in accordance with some otherembodiments.

FIG. 6C is a cross-sectional view illustrating the spray coatingequipment and a substrate in one of the steps of the method formanufacturing a display device in accordance with some otherembodiments.

FIG. 7A is a top view of a pickup device in accordance with someembodiments.

FIG. 7B is a cross-sectional view of a pickup device in accordance withsome embodiments.

FIG. 7C is a cross-sectional view of a pickup device in accordance withsome other embodiments.

FIG. 7D is a cross-sectional view of a pickup device and alight-emitting element in accordance with some embodiments.

FIG. 7E is a top view of a pickup device in accordance with some otherembodiments.

FIG. 7F is a top view of a pickup device in accordance with some otherembodiments.

FIG. 7G is a top view of a pickup device in accordance with some otherembodiments.

FIGS. 8A-8B are top views illustrating a carrier substrate and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 8C is a top view illustrating a display device in one of the stepsof the method for manufacturing a display device in accordance with someother embodiments.

FIGS. 9A-9B are top views illustrating a carrier substrate and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 9C is a top view illustrating a display device in one of the stepsof the method for manufacturing a display device in accordance with someother embodiments.

FIG. 9D is a top view illustrating a display device in one of the stepsof the method for manufacturing a display device in accordance with someother embodiments.

FIG. 10A is a side view illustrating a pickup device and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 10B is a side view illustrating a pickup device and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 10C is a side view illustrating a pickup device and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 11A is a side view illustrating a pickup device and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 11B is a side view illustrating a pickup device and a displaydevice in one of the steps of the method for manufacturing a displaydevice in accordance with some other embodiments.

FIG. 11C is a side view illustrating a display device in one of thesteps of the method for manufacturing a display device in accordancewith some other embodiments.

FIG. 12A is a top view illustrating a pickup device and a display devicein one of the steps of the method for manufacturing a display device inaccordance with some other embodiments.

FIG. 12B is a top view illustrating a pickup device and a display devicein one of the steps of the method for manufacturing a display device inaccordance with some other embodiments.

FIG. 13A is a top view of a display device in accordance with some otherembodiments.

FIG. 13B is a top view of a display device in accordance with some otherembodiments.

FIG. 13C is a cross-sectional view of a display device in accordancewith some other embodiments.

FIGS. 13D-1 and 13D-2 are top views of a display device in accordancewith some other embodiments.

FIGS. 13E-1 and 13E-2 are top views of a display device in accordancewith some other embodiments.

DETAILED DESCRIPTION OF THE INVENTION

The substrates, the display devices and the methods for manufacturingthe display device of the present disclosure in accordance with someembodiments are described in detail in the following description. Itshould be appreciated that in the following detailed descriptionprovides various embodiments and examples in order to perform variousconfigurations of some embodiments of the present disclosure. Thespecific elements and configurations described in the following detaileddescription are set forth in order to clearly describe some embodimentsof the present disclosure. It will be apparent that the exemplaryembodiments set forth herein are used merely for the purpose ofillustration, and the inventive concept may be embodied in various formswithout being limited to those exemplary embodiments. In addition, thedrawings of different embodiments may use repeated numerals or marks.Those repetitions are merely in order to clearly describe someembodiments of the present disclosure. However, the use of repeatednumerals in the drawings of different embodiments does not suggest anycorrelation between different embodiments and/or configurations. Inaddition, in this specification, expressions such as “first materiallayer disposed on/over a second material layer”, may indicate the directcontact of the first material layer and the second material layer, or itmay indicate a non-contact state with one or more intermediate layersbetween the first material layer and the second material layer. In theabove situation, the first material layer may not be in direct contactwith the second material layer.

In addition, in this specification, relative expressions may be used.For example, “lower”, “bottom”, “higher” or “top” are used to describethe position of one element relative to another. It should beappreciated that if a device is flipped upside down, an element that is“lower” will become an element that is “higher”.

The terms “about”, “substantially” and “approximately” typically mean+/−20% of the stated value, more typically +/−10% of the stated value,more typically +/−5% of the stated value, more typically +/−3% of thestated value, more typically +/−2% of the stated value, more typically+/−1% of the stated value and even more typically +/−0.5% of the statedvalue. The stated value of the present disclosure is an approximatevalue. When there is no specific description, the stated value includesthe meaning of “about”, “substantially”, or “approximately”.

It should be understood that, although the terms “first”, “second”,“third” etc. may be used herein to describe various elements,components, regions, layers and/or portions, and these elements,components, regions, layers, and/or portions should not be limited bythese terms. These terms are only used to distinguish one element,component, region, layer, or portion. Thus, a first element, component,region, layer or portion discussed below could be termed a secondelement, component, region, layer or portion without departing from theteachings of some embodiments of the present disclosure.

Unless defined otherwise, all the terms (including technical andscientific terms) used herein have the same meaning as commonlyunderstood by one of ordinary skill in the art to which this disclosurebelongs. It should be appreciated that, in each case, the term, which isdefined in a commonly used dictionary, should be interpreted as having ameaning that conforms to the relative skills of the present disclosureand the background or the context of the present disclosure, and shouldnot be interpreted in an idealized or overly formal manner unless sodefined in the present disclosure.

This description of the exemplary embodiments is intended to be read inconnection with the accompanying drawings, which are to be consideredpart of the entire written description. It should be appreciated thatthe drawings are not drawn to scale. The shape and the thickness ofembodiments may be exaggerated in the drawings to clarify the featuresof the present disclosure. In addition, structures and devices are shownschematically in order to clarify the features of the presentdisclosure.

In some embodiments of the present disclosure, relative terms such as“downwards,” “upwards,” “horizontal,” “vertical,”, “below,” “above,”“top” and “bottom” as well as derivative thereof (e.g., “horizontally,”“downwardly,” “upwardly,” etc.) should be construed to refer to theorientation as then described or as shown in the drawing underdiscussion. These relative terms are for convenience of description anddo not require that the apparatus be constructed or operated in aparticular orientation. Terms concerning attachments, coupling and thelike, such as “connected” and “interconnected,” refer to a relationshipwherein structures are in contact with one another either directly orindirectly, wherein there are other structures disposed between both thestructures, unless expressly described otherwise. These relative termsalso include the relationships wherein both structures are movable orrigid attachments.

It should be noted that, the term “substrate” is meant to includeelements formed on a transparent substrate and the layers overlying thetransparent substrate. However, the substrate is represented with a flatsurface in order to simplify the drawing. In addition, the term“substrate surface” is meant to include the uppermost exposed layers ona transparent substrate, such as an insulating layer and/or metalliclines.

Some embodiments of the disclosure utilize a pixel electrode disposed ona transistor layer in a display device and a conductive connectionportion in the transistor layer to form a capacitor in order to increasethe display quality of the display device.

First, referring to FIG. 1A, FIG. 1A is a cross-sectional view of adisplay device 100A in accordance with some embodiments. The displaydevice 100A includes a substrate 104, wherein the substrate 104 hasopposite top surface 104A and bottom surface 104B. The substrate 104 mayinclude transparent substrate, for example, glass substrate, ceramicsubstrate, plastic substrate, or any other suitable substrate.

Referring to FIG. 1A, in some embodiments, a patterned bottom conductivelayer 106 is disposed on the top surface 104A of the substrate 104. Thepatterned bottom conductive layer 106 includes a first block 106A and asecond block 106B disposed corresponding to the two subsequenttransistors, respectively.

In some embodiments, the material of the patterned bottom conductivelayer 106 may include Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, analloy thereof, a combination thereof, or another metal material withgood conductivity. In other embodiments, the patterned bottom conductivelayer 106 may be a non-metal material, as long as the material used hasconductivity. The material of the patterned bottom conductive layer 106may be formed by chemical vapor deposition (CVD), sputtering, resistanceheating evaporation, electron beam evaporation, or any other suitabledeposition method. In some embodiments, the CVD may be, for example, lowpressure chemical vapor deposition (LPCVD), low temperature chemicalvapor deposition (LTCVD), rapid thermal chemical vapor deposition(RTCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layerdeposition (ALD), or another commonly used method.

Referring to FIG. 1A, a buffer layer 108 is disposed on the patternedbottom conductive layer 106 and the substrate 104. In some embodiments,the buffer layer 108 may be silicon oxide, silicon nitride, siliconoxynitride, or any other suitable insulating material. In someembodiments, the buffer layer 108 may be formed by the aforementionedCVD, spin-on coating, or any other suitable method.

Referring to FIG. 1A, a semiconductor layer 110A is disposed on thebuffer layer 108. The semiconductor layer 110A is disposed correspondingto the first block 106A of the patterned bottom conductive layer 106. Inaddition, another semiconductor layer 110B is disposed on the bufferlayer 108. The semiconductor layer 110B is disposed corresponding to thesecond block 106B of the patterned bottom conductive layer 106.

In some embodiments, The semiconductor layer 110A and/or thesemiconductor layer 110B may include elemental semiconductors includingsilicon and germanium, compound semiconductors including gallium nitride(GaN), silicon carbide, gallium arsenide, gallium phosphide, indiumphosphide, indium arsenide and/or indium antimonide, alloysemiconductors including SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInPand/or GaInAsP, combinations thereof, or any other suitable material. Insome embodiments, the semiconductor layer 110A and/or the semiconductorlayer 110B may be formed by epitaxial method, the aforementioned CVD, orany other suitable method.

Referring to FIG. 1A, a gate dielectric layer 112 is disposed on thesemiconductor layer 110A and/or the semiconductor layer 110B. In someembodiments, the gate dielectric layer 112 may be silicon oxide, siliconnitride, silicon oxynitride, high-k dielectric materials, any othersuitable dielectric material, or a combination thereof. The high-kdielectric materials may be metal oxide, metal nitride, metal silicide,transition metal oxide, transition metal nitride, transition metalsilicide, metal oxynitride, metal aluminate, zirconium silicate,zirconium aluminate. For example, the high-k dielectric materials may beLaO, AlO, ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO,HfO₂, HfO₃, HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfTiO,HfTaTiO, HfAlON, (Ba,Sr) TiO₃ (BST), Al₂O₃, another suitable high-kdielectric material, or a combination thereof. The gate dielectric layer112 may be formed by the aforementioned CVD, spin-on coating, or anyother suitable method.

Referring to FIG. 1A, a first patterned conductive layer 114 is disposedon the semiconductor layers 110A and 110B, or on the gate dielectriclayer 112. In some embodiments, the first patterned conductive layer 114includes a gate electrode 114A and another gate electrode 114B disposedrespectively corresponding to the semiconductor layer 110A and thesemiconductor layer 110B. In addition, as shown in FIG. 1A, the firstpatterned conductive layer 114 may further include a conductiveconnection portion 180 disposed between the gate electrode 114A and thegate electrode 114B, and connected to the gate electrode 114B inaccordance with some embodiments, wherein the conductive connectionportion 180 and the gate electrode 114B are in the same layer.Therefore, the conductive connection portion 180 and the gate electrode114B belong to the first patterned conductive layer 114 and are formedby the same photolithography process used for patterning.

However, the structure of the embodiments of the disclosure is notlimited to FIG. 1A. In some other embodiments, the first patternedconductive layer 114 may also be disposed between the semiconductorlayers 110A and the substrate 104, and between the semiconductor layer110B and the substrate 104. In more detail, in some embodiments, thefirst patterned conductive layer 114 may be disposed between thesemiconductor layer 110A and the buffer layer 108, and between thesemiconductor layer 110B and the buffer layer 108. In addition, in theembodiment, the gate dielectric layer 112 is disposed between the gateelectrode 114A and the semiconductor layer 110A, and between the gateelectrode 114B and the semiconductor layer 110B.

Referring to FIG. 1A, a first insulating layer 116 covers the firstpatterned conductive layer 114 and the gate dielectric layer 112. Insome embodiments, the first insulating layer 116 may be silicon nitride,silicon dioxide, silicon oxynitride, or any other suitable insulatingmaterial. In some embodiments, the first insulating layer 116 may beformed by the aforementioned CVD, spin-on coating, or any other suitablemethod.

Referring to FIG. 1A, a second patterned conductive layer 118 isdisposed on the first insulating layer 116 (or on the first patternedconductive layer 114). In some embodiments, the second patternedconductive layer 118 includes a source electrode 118S1 and a drainelectrode 118D1. The source electrode 118S1 and the drain electrode118D1 are disposed on the opposite sides of the semiconductor layer 110Aand electrically connected to both ends of the semiconductor layer 110A,respectively.

Referring to FIG. 1A, in some embodiments, the second patternedconductive layer 118 further includes a source electrode 118S2 and adrain electrode 118D2. The source electrode 118S2 and the drainelectrode 118D2 are disposed on the opposite sides of the semiconductorlayer 110B and electrically connected to both ends of the semiconductorlayer 110B, respectively.

Moreover, as shown in FIG. 1A, the second patterned conductive layer 118further includes a second extension portion 118E. The drain electrode118D1 may be electrically connected to the conductive connection portion180 of the first patterned conductive layer 114 and the gate electrode114B through the second extension portion 118E in accordance with someembodiments.

In some embodiments, the semiconductor layer 110A, the gate electrode114A, the source electrode 118S1 and the drain electrode 118D1 arecombined as a first transistor 120A. In some embodiments, thesemiconductor layer 110B, the gate electrode 114B, the source electrode118S2 and the drain electrode 118D2 are combined as a second transistor120B.

Referring to FIG. 1A, a second insulating layer 122 covers the firstinsulating layer 116 and the second patterned conductive layer 118. Insome embodiments, the second insulating layer 122 may be siliconnitride, silicon dioxide, silicon oxynitride, or any other suitableinsulating material. In some embodiments, the second insulating layer122 may be formed by the aforementioned CVD, spin-on coating, or anyother suitable method.

Referring to FIG. 1A, a third insulating layer 124 covers the secondinsulating layer 122. In some embodiments, the third insulating layer124 may be silicon nitride, silicon dioxide, silicon oxynitride, or anyother suitable organic or inorganic insulating material. In someembodiments, the third insulating layer 124 may be formed by theaforementioned CVD, spin-on coating, or any other suitable method.

Referring to FIG. 1A, in some embodiments, a pixel electrode 130 isdisposed on the third insulating layer 124. In some embodiments, thesemiconductor layer 110A, the semiconductor layer 110B, the gatedielectric layer 112, the gate electrode 114A, the gate electrode 114B,the first insulating layer 116, the source electrode 118S1, the drainelectrode 118D1, the source electrode 118S2, the drain electrode 118D2,the second insulating layer 122 and the third insulating layer 124 arecombined as first transistors 120A and second transistors 120B, and thefirst transistors 120A and the second transistors 120B are combined as atransistor layer 128. In some embodiments, referring to FIG. 1A, the topsurface of the second transistor 120B has a recess 126.

Referring to FIG. 1A, a pixel electrode 130 is conformally disposed inthe recess 126. As shown in FIG. 1A, the pixel electrode 130 isconformally disposed on the top surface of the recess 126 andelectrically connected to the drain electrode 118D2 in accordance withsome embodiments.

In some embodiments, the material of the pixel electrode 130 may be Cu,Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof, a combinationthereof, or another metal material with good conductivity, ortransparent conductive materials, for example, indium tin oxide (ITO),SnO, indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indiumtin zinc oxide (ITZO), antimony tin oxide (ATO), antimony oxide zinc(AZO), combinations thereof, or any other suitable transparentconductive oxide material. In other embodiments, the material of thepixel electrode 130 may be a non-metal material, as long as the materialused has conductivity. The material of the pixel electrode 130 may beformed by the aforementioned CVD, sputtering, resistance heatingevaporation, electron beam evaporation, or any other suitable depositionmethod

In some embodiments, the pixel electrode 130 and the conductiveconnection portion 180 can form a capacitor. For example, as shown inFIG. 1A, the conductive connection portion 180 of the first patternedconductive layer 114 is electrically isolated from the pixel electrode130, and the pixel electrode 130 and the conductive connection portion180 form a first capacitor C1, wherein the capacitor C1 has anequivalent permittivity c and a thickness d. When the conductiveconnection portion 180 and the gate electrode 114B of the secondtransistor 120B are in the same layer, and an insulating layer betweenthe conductive connection portion 180 and the pixel electrode 130further includes the first insulating layer 116 and the secondinsulating layer 122, the thickness and the equivalent permittivity ofthe first insulating layer 116 are respectively d1 and ε, the thicknessand the equivalent permittivity of the second insulating layer 122 arerespectively d2 and ε2. The thickness d of the capacitor C1 isequivalent to the thickness d1 of the first insulating layer plus thethickness d2 of the second insulating layer. Therefore, the capacitor C1is equivalent to the capacitor of the first insulating layer 116serially connected to the capacitor of the second insulating layer 122.Thus, after normalized the area of the capacitor C1, which is equivalentto a ratio of the equivalent permittivity ε and the thickness d. In someembodiments, the capacitance of the capacitor C1 may be represented bythe following Formula 1.

$\begin{matrix}{{{C\; 1} = {\frac{ɛ}{d} = \frac{1}{\frac{1}{\frac{ɛ1}{d\; 1}} + \frac{1}{\frac{ɛ2}{d\; 2}}}}}{{unit}\text{:}\mspace{14mu}\left( {{1E} + 5} \right)F\text{/}m^{\bigwedge}2}{ɛ\text{:}\mspace{14mu}{the}\mspace{14mu}{equivalent}\mspace{14mu}{permittivity}\mspace{14mu}{of}\mspace{14mu} C\; 1}{{ɛ1}\text{:}\mspace{14mu}{the}\mspace{14mu}{equivalent}\mspace{14mu}{permittivity}\mspace{11mu}{of}\mspace{14mu}{the}\mspace{14mu}{first}}\text{}{{insulating}\mspace{14mu}{layer}}{{ɛ2}\text{:}\mspace{14mu}{the}\mspace{14mu}{equivalent}\mspace{14mu}{permittivity}\mspace{11mu}{of}\mspace{14mu}{the}\mspace{14mu}{second}}\text{}{{insulating}\mspace{14mu}{layer}}{d\text{:}\mspace{14mu}{the}\mspace{14mu}{thickness}\mspace{14mu}{of}\mspace{14mu} C\; 1}{d\; 1\text{:}\mspace{14mu}{the}\mspace{14mu}{thickness}\mspace{14mu}{of}\mspace{14mu}{the}\mspace{14mu}{first}\mspace{14mu}{insulating}\mspace{14mu}{layer}}{d\; 2\text{:}\mspace{14mu}{the}\mspace{14mu}{thickness}\mspace{14mu}{of}\mspace{14mu}{the}\mspace{14mu}{second}\mspace{14mu}{insulating}\mspace{14mu}{layer}}} & {{Formula}\mspace{14mu} 1}\end{matrix}$

In some embodiments, the unit of Formula 1 is (1E+5)F/m{circumflex over( )}2. In some embodiments, the ε in Formula 1 is the equivalentpermittivity of the capacitor C1. The ε1 in Formula 1 is the equivalentpermittivity of the first insulating layer. The ε2 in Formula 1 is theequivalent permittivity of the second insulating layer. The d in Formula1 is the thickness of the capacitor C1. The d1 in Formula 1 is thethickness of the first insulating layer. The d2 in Formula 1 is thethickness of the second insulating layer. The insulating layer betweenthe conductive connection portion 180 and the pixel electrode 130 may besingle-layer or multi-layer. The capacitor C1 in the embodiment ismulti-layer. Referring to Table 1 and 2, the ratio of the equivalentpermittivity ε and the thickness d of the capacitor C1 is in a rangefrom 0.4*(1E+5)F/m{circumflex over ( )}2 to 296.48*(1E+5)F/m{circumflexover ( )}2. When the conductive connection portion 180 and the gateelectrode 114B of the second transistor 120B are in the same layer, theratio of the equivalent permittivity ε and the thickness d of thecapacitor C1 is in a range from 0.4*(1E+5)F/m{circumflex over ( )}2 to88.5*(1E+5)F/m{circumflex over ( )}2.

TABLE 1 A capacitor C1, and First Second Organic the insulatinginsulating insulating material layer is multi-layer layer layer layer ε3.7~4.5 3.7~7.2 2.7~4.2 d (Å)  200~5000  200~5000  5000~50000 (ε/d) *(1E + 5)F/m{circumflex over ( )}2 Max 88.5 Min 0.4

TABLE 2 A capacitor C2, and First Organic the insulating insulatingmaterial layer is single-layer layer layer ε 3.7~4.5 2.7~4.2 d (Å) 200~5000  5000~50000 (ε/d) * (1E + 5)F/m{circumflex over ( )}2 Max296.48 Min 0.45

Therefore, in some embodiments, when the first insulating layer is SiOxmaterial, the thickness d1 of the first insulating layer is in a rangefrom 200 Å to 5000 Å, and the second insulating layer is SiNx material,the thickness d2 of the second insulating layer is in a range from 200 Åto 5000 Å, the above-mentioned range of the ratio may be obtained.Furthermore, when one of the first insulating layer and the secondinsulating layer may be made of organic material, or there is aplanarization layer (PFA) made of organic material covering the firstinsulating layer and the second insulating layer, the above-mentionedrange of the ratio may also be obtained.

In some embodiments, the display quality of the display device 100A maybe increased by utilizing the first patterned conductive layer 114 andthe pixel electrode 130 disposed on the substrate 104 in the displaydevice 100A to form a capacitor.

Referring to FIG. 1A, an anisotropic conductive film (ACF) 132 isdisposed in the recess 126 of the third insulating layer 124 and on thepixel electrode 130. In some embodiments, the ACF 132 is a thermo-curingresin film or an UV-curing resin film with conductive particles. In someembodiments, the conductive particles may be nanoparticles, nanorods,nanowires, nanosheets, or any other suitable material. In someembodiments, the shape of the conductive particles may be square,triangle, circle, or any other suitable shape. In some embodiments, thematerial of the conductive particles may be Ag, Au, Cu, Al, Mo, W, Cr,Ni, Pt, Ti, Ir, Rh, an alloy thereof, a combination thereof, or anothermetal material with good conductivity.

Referring to FIG. 1A, a light-emitting element 134 is disposed on thepixel electrode 130 in the recess 126 and electrically connected to thepixel electrode 130 and the drain electrode 118D2. In more detail, asshown in FIG. 1A, the light-emitting element 134 includes an electrode134E1 and another electrode 134E2 respectively disposed on the bottomand top surfaces of the light-emitting element 134. The electrode 134E1is disposed in the ACF 132 and electrically connected to the pixelelectrode 130 and the drain electrode 118D1 through the ACF 132. In someembodiments, the electrode 134E2 is not disposed in the ACF 132.

In some embodiments, the thickness H of the light-emitting element 134is equivalent to the distance between the top surface and the bottomsurface of the light-emitting element 134, which is the thickness of thelight-emitting element 134 after subtracting that of the electrodes134E1 and 134E2. The thickness H of the light-emitting element 134 is ina range from about 2 μm to about 12 μm. In some embodiments, thethickness H of the light-emitting element 134 may be in a range fromabout 3 μm to about 10 μm.

In some embodiments, the light-emitting element 134 includeslight-emitting diodes (LEDs), for example, red light LEDs, blue lightLEDs, green light LEDs, UV-LEDs, white LEDs, or any other suitable LED.

Referring to FIG. 1A, an insulating layer 136 fills into the recess 126.In some embodiments, the insulating layer 136 may further extend on therecess 126 and cover a portion of the third insulating layer 124. Asshown in FIG. 1A, the insulating layer 136 covers the pixel electrode130 in accordance with some embodiments. In addition, in someembodiments, the insulating layer 136 surrounds the light-emittingelement 134 and exposes the electrode 134E2 of the light-emittingelement 134.

Referring to FIG. 1A, a third patterned conductive layer 138 is disposedon the third insulating layer 124 (or on the top surface of thetransistor layer 128). In some embodiment, the third patternedconductive layer 138 may be connected to ground. However, in otherembodiments, the third patterned conductive layer 138 may not beconnected to ground, and may transfer signals.

In some embodiments, the material of the third patterned conductivelayer 138 may include Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, analloy thereof, a combination thereof, or another metal material withgood conductivity. In other embodiments, the material of the thirdpatterned conductive layer 138 may be a non-metal material, as long asthe material used has conductivity. In some embodiments, the material ofthe third patterned conductive layer 138 may be formed by theaforementioned CVD, sputtering deposition, resistance heatingevaporation, electron beam evaporation, or any other suitable depositionmethod.

Referring to FIG. 1A, in some embodiments, a top electrode layer 140covers the third insulating layer 124, the electrode 134E2 of thelight-emitting element 134, the insulating layer 136 and the thirdpatterned conductive layer 138. In some embodiments, the top electrodelayer 140 may be electrically connected to the third patternedconductive layer 138 and the electrode 134E2 of the light-emittingelement 134.

In some embodiments, the material of the top electrode layer 140 mayinclude transparent conductive materials, for example, ITO, SnO, IZO,IGZO, ITZO, ATO, AZO, combinations thereof, or any other suitabletransparent conductive oxide material. In some embodiments, the materialof the top electrode layer 140 may be formed by the aforementioned CVD,sputtering deposition, resistance heating evaporation, electron beamevaporation, or any other suitable deposition method.

Referring to FIG. 1A, in some embodiments, a light guiding layer 142covers the top electrode layer 140, and a light conversion layer 144disposed on the light guiding layer 142. In some embodiments, the lightconversion layer 144 is disposed corresponding to the light-emittingelement 134.

In some embodiments, the light conversion layer 144 may be a fluorescentlayer 144. In some embodiments, the light emitted by the light-emittingelement 134 generates white light after passing through the fluorescentlayer 144. The white light may generate light of different colorsthrough a subsequent color filter layer. The material of the fluorescentlayer 144 may be aluminate, silicate, nitride, oxynitride, combinationsthereof, or any other suitable fluorescent material.

In some embodiments, the light conversion layer 144 may be a quantumdots film 144. The material of the quantum dots film 144 may include anorganic or inorganic layer doped with quantum dots. The quantum dots are3D nanostructures made of a component including Zn, Cd, Se, S, or acombination thereof. The diameter of the quantum dots is in a range fromapproximately 1 nm to 10 nm. Through adjusting the diameter of thequantum dots, the color of the light that generated by the quantum dotsfilm 144 after excited by the light emitted from the light-emittingelement 134 (e.g. blue light of wavelength between 380-500 nm) may bechanged.

Referring to FIG. 1A, the display device 100A further includes a secondsubstrate 146 disposed opposite the substrate 104, and a bonding layer148 disposed between the substrate 104 and the second substrate 146. Thematerial of the bonding layer may be, for example, an optical clearadhesive. In some embodiments, the bonding layer 148 may bond thesubstrate 104 and the second substrate 146.

In some embodiments, the second substrate 146 is a color filtersubstrate. In more detail, the second substrate 146 which is a colorfilter substrate may include a substrate 150, and a color filter layer152 disposed on the substrate 150. In addition, in some embodiments, alight-shielding layer 154 is disposed on the sides of the color filterlayer 152.

In some embodiments, the substrate 150 may include transparentsubstrate, for example, glass substrate, ceramic substrate, plasticsubstrate, or any other suitable substrate. The color filter layer 152may include a red color filter layer, a green color filter layer, a bluecolor filter layer or any other suitable color filter layer. Thelight-shielding layer 154 may include black photoresist, black printingink, or black resin.

Referring to FIG. 1B, FIG. 1B is a cross-sectional view of a displaydevice 100B in accordance with some other embodiments. In theembodiments, the conductive connection portion 180 of the secondpatterned conductive layer 118 is electrically isolated from the pixelelectrode 130, wherein the conductive connection portion 180 and thesource electrode 118S2 of the second transistor 120B are in the samelayer. The conductive connection portion 180 and the pixel electrode 130form a second capacitor C2, wherein the capacitor C2 has an equivalentpermittivity (εr*ε0) and a thickness d2. Referring to the aforementionedTable 2, the capacitance of the capacitor C2 is equivalent to thecapacitance of a capacitor that consists of the first insulating layer116. Accordingly, after normalized the area of the capacitor C2, theratio of the equivalent permittivity to the thickness is in a range from0.45*(1E+5)F/m{circumflex over ( )}2 to 296.48*(1E+5)F/m{circumflex over( )}2.

Furthermore, as shown in FIG. 1C-1, the patterned bottom conductivelayer 106 disposed below the first patterned conductive layer 114 andthe second patterned conductive layer 118 further includes an auxiliaryelectrode 106E in accordance with some embodiments. The auxiliaryelectrode 106E is disposed between the substrate 104 and the conductiveconnection portion 180, and the auxiliary electrode 106E is at leastpartially overlapped with the conductive connection portion 180 andelectrically connected to the second block 106B of the patterned bottomconductive layer 106. In some embodiments, the auxiliary electrode 106Eis electrically isolated from the conductive connection portion 180, andthe auxiliary electrode 106E and the conductive connection portion 180form a third capacitor C3.

In addition, as shown in FIG. 1C-2, in some other embodiments, when theconductive connection portion 180 and the gate electrode 114B of thesecond transistor 120B are in the same layer, and the auxiliaryelectrode 106E is disposed between the substrate 104 and the conductiveconnection portion 180, the auxiliary electrode 106E is at leastpartially overlapped with the conductive connection portion 180. Theauxiliary electrode 106E and the conductive connection portion 180 forma fourth capacitor C4.

Referring to FIG. 1D, FIG. 1D is a cross-sectional view of a displaydevice 100D in accordance with some other embodiments. As shown in FIG.1D, the top electrode layer 140 is connected to ground through the firstpatterned conductive layer 114 in accordance with other embodiments. Inmore detail, the first patterned conductive layer 114 further includes aconductive block 114C connected to ground. Referring to FIG. 1D, thefirst insulating layer 116 includes an opening 116A exposing theconductive block 114C, and a conductive layer 156 is disposed in theopening 116A.

Referring to FIG. 1D, the second insulating layer 122 and the thirdinsulating layer 124 include an opening 124A exposing the conductivelayer 156, and a conductive layer 158 is disposed in the opening 124A.In some embodiments, the top electrode layer 140 fills into the opening124A and is connected to ground through the conductive layer 158, theconductive layer 156 and the conductive block 114C. In the embodiments,the opening 116A is aligned with the opening 124A.

In some embodiments, the materials of the conductive layer 158, theconductive layer 156 and the conductive block 114C may individuallyinclude Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof, acombination thereof, or another metal material with good conductivity.In some other embodiments, the materials of the conductive layer 158,the conductive layer 156 and the conductive block 114C may individuallybe a non-metal material, as long as the material used has conductivity.The materials of the conductive layer 158, the conductive layer 156 andthe conductive block 114C may individually be formed by theaforementioned CVD, sputtering, resistance heating evaporation, electronbeam evaporation, or any other suitable deposition method.

Referring to FIG. 1E, FIG. 1E is a cross-sectional view of a displaydevice 100E in accordance with some other embodiments. As shown in FIG.1E, the opening 116A is not aligned with the opening 124A, and theconductive layer 156 fully fills into the opening 116A in accordancewith other embodiments. In some embodiments, the top electrode layer 140fills into the opening 124A and is connected to ground through theconductive layer 158, the conductive layer 156 and the conductive block114C.

Referring to FIG. 1F, FIG. 1F is a cross-sectional view of a displaydevice 100F in accordance with some other embodiments. As shown in FIG.1F, the light-emitting element 134 may be a flip-chip LED 134. In someembodiments, the flip-chip LED 134 may include a substrate 160. A firstsemiconductor layer 162 is disposed on the substrate 160, and the firstsemiconductor layer 162 has a first conductive type. The firstsemiconductor layer 162 may include doped or undoped GaN, InN, AlN,In_(x)Ga_((1-x)) N, Al_(x)In_((1-x)) N, Al_(x)In_(y)Ga_((1-x-y)) N, oranother similar material, wherein 0≤x≤1, 0≤y≤1, and 0≤(x+y)≤1. The firstsemiconductor layer 162 may be a P-type semiconductor layer or an N-typesemiconductor layer, and may be formed by molecular beam epitaxy (MBE),metal-organic chemical vapor deposition (MOCVD), hydride vapor phaseepitaxy (HVPE), liquid phase epitaxy (LPE), or another similar epitaxialgrowth process.

Referring to FIG. 1F, an active layer 164 is disposed on the firstsemiconductor layer 162. The active layer 164 may include homojunction,heterojunction, single-quantum well (SQW), multiple-quantum well (MQW),or another similar structure. In an embodiment, the active layer 164 mayinclude undoped N-type In_(x)Ga_((1-x)) N. In other embodiments, theactive layer 164 may include, for example, Al_(x)In_(y)Ga_((1-x-y)) N oranother commonly used material. In other embodiments, the active layer164 may be a multiple-quantum well structure including a staggeredarrangement of multiple-quantum well layer (such as InGaN) and barrierlayer (such as GaN). Moreover, the methods for forming the active layer164 may include MOCVD, MBE, HVPE, LPE, or another suitable CVD method.The total thickness of the active layer 164 is in a range fromapproximately 5 nm to 400 nm.

Referring to FIG. 1F, a second semiconductor layer 166 is disposed onthe active layer 164, and the second semiconductor layer 166 has asecond conductive type, which is different from the first conductivetype. The second semiconductor layer 166 may include doped or undopedGaN, InN, A1N, In_(x)Ga_((1-x)) N, Al_(x)In_((1-x)) N,Al_(x)In_(y)Ga_(1-x-y)) N, or another similar material, wherein 0≤x≤1,0≤y≤1, and 0≤(x+y)≤1. The second semiconductor layer 166 may be a P-typesemiconductor layer or an N-type semiconductor layer, and may be formedby MBE, MOCVD, HVPE, LPE, or another similar epitaxial growth process.

Referring to FIG. 1F, the LED 134 may further include an electrode 134E2and another electrode 134E1, wherein the electrode 134E2 is electricallyconnected to the first semiconductor layer 162, and the electrode 134E1is electrically connected to the second semiconductor layer 166. In someembodiments, the electrode 134E2 and the electrode 134E1 may be asingle-layer or multi-layer Au, Cr, Ni, Pt, Ti, Al, Ir, Rh, combinationsthereof, or another metal material with good conductivity. The electrode134E2 and the electrode 134E1 may be formed by a deposition andpatterning process.

In some embodiments, the thickness H of the light-emitting element 134is equivalent to the distance between the surface of the substrate 160of the light-emitting element 134 and the surface of the secondsemiconductor layer 166, which is the thickness of the light-emittingelement 134 after subtracting that of the electrode 134E1 and theelectrode 134E2. The thickness H of the light-emitting element 134 is ina range from about 2 μm to about 12 μm. In some embodiments, thethickness H of the light-emitting element 134 is in a range from about 3μm to about 10 μm.

Referring to FIG. 1F, in some embodiments, the pixel electrode 130includes a first portion 130A and a second portion 130B electricallyinsulated from each other, and the third patterned conductive layer 138includes an electrode 138A and another electrode 138B. The electrode138A is disposed on the first portion 130A, and the electrode 138B isdisposed on the second portion 130B. The electrode 138A is electricallyconnected to the drain electrode 118D2.

Referring to FIG. 1F, the electrode 138A of the third patternedconductive layer 138 is electrically connected to the electrode 134E1,and the electrode 138B is electrically connected to the electrode 134E2.The flip-chip LED 134 is attached to the transistor layer 128 throughflip-chip method.

FIGS. 2A-2C are top views illustrating the method for manufacturing theelectrode 138A and the electrode 138B of the third patterned conductivelayer 138 in accordance with some embodiments.

Referring to FIG. 2A, in some embodiments, a first electrode layer 168including an electrode block 168A and another electrode block 168B isformed on the transistor layer 128. In some embodiments, the electrodeblock 168A is electrically connected to a via V1 and used as an emittingelectrode. The electrode block 168B is electrically connected to a viaV2 and used as a common electrode. The electrode block 168A iselectrically isolated to the electrode block 168B.

In some embodiments, the material of the first electrode layer 168 mayinclude Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof, acombination thereof, or another metal material with good conductivity.In other embodiments, the materials of the first electrode layer 168 maybe a non-metal material, as long as the material used has conductivity.The materials of the first electrode layer 168 may be formed by theaforementioned CVD, sputtering deposition, resistance heatingevaporation, electron beam evaporation, or any other suitable depositionmethod.

Next, a test may be performed on the electrode block 168A that is usedas an emitting electrode. Then, as shown in FIG. 2B, in the event thatthe device passes the test, a second electrode layer 170 may be formedon the transistor layer 128 and the first electrode layer 168 inaccordance with some embodiments. The second electrode layer 170 coversthe first electrode layer 168.

In some embodiments, the material of the second electrode layer 170 mayinclude Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof, acombination thereof, or another metal material with good conductivity.In other embodiments, the materials of the second electrode layer 170may be a non-metal material, as long as the material used hasconductivity. The materials of the second electrode layer 170 may beformed by the aforementioned CVD, sputtering deposition, resistanceheating evaporation, electron beam evaporation, or any other suitabledeposition method.

Then, as shown in FIG. 2C, the electrode 138A and the electrode 138B ofthe third patterned conductive layer 138 are formed by patterning thefirst electrode layer 168 and the second electrode layer 170 inaccordance with some embodiments.

In more detail, as shown in FIG. 2C, after the patterning process, thefirst electrode layer 168 is patterned to be an electrode block 168B,electrode block 168C and electrode block 168D, and the second electrodelayer 170 is patterned to be an electrode block 170A and anotherelectrode block 170B in accordance with some embodiments.

In some embodiments, the above-mentioned patterning process may beperformed by a single etching step. However, in some other embodiments,the above-mentioned patterning process may be performed by two or moreetching steps. Moreover, after one or more etching step is performed,photoresist ashing is applied to change the pattern of the photoresist,and then the above-mentioned patterning process may be performed againby one or more etching steps.

FIG. 2D is a cross-sectional view illustrated along the section 2D-2D ofFIG. 2C. In order to clarify the present disclosure, FIG. 2D does notillustrate the details of the structure and the recess of the transistorlayer 128.

As shown in FIGS. 2C-2D, in some embodiments, the electrode block 170Aof the second electrode layer 170 covers the electrode block 168D of thefirst electrode layer 168, and the electrode block 170A and theelectrode block 168D form the electrode 138A in accordance with someembodiments. The electrode 138A is electrically connected to the via V1and used as an emitting electrode.

In addition, the electrode block 170B of the second electrode layer 170covers the electrode block 168B and the electrode block 168C of thefirst electrode layer 168, and the electrode block 170B, the electrodeblock 168B and the electrode block 168C form the electrode 138B. Theelectrode 138B is electrically connected to the via V2 and used as acommon electrode.

In some embodiments, at least one of the electrode 138A and theelectrode 138B has a first portion and a second portion, and thethickness of the first portion is greater than that of the secondportion. For example, as shown in FIG. 2D, the electrode 138B has afirst portion 172A and a second portion 172B, and the thickness of thefirst portion 172A is greater than that of the second portion 172B.

In more detail, the first portion 172A includes the first electrodelayer 168 disposed on the top surface of the transistor layer 128, andthe second transistor layer 170 disposed on the first electrode layer168. The second portion 172B includes the second electrode layer 170disposed on the top surface of the transistor layer 128.

In some embodiments, the materials of the first electrode layer 168 andthe second electrode layer 170 may be the same. However, in otherembodiments, the materials of the first electrode layer 168 and thesecond electrode layer 170 may be different.

Furthermore, in some embodiments, as shown in FIG. 2D, the electrode138A is electrically isolated from the electrode 138B, and the secondelectrode layer 170 does not cover the side edges of the first electrodelayer 168. However, in other embodiments, the second electrode layer 170may also cover one or more side edge of the first electrode layer 168,as long as the electrode 138A is electrically isolated from theelectrode 138B. In the embodiments, both of the electrode 138A and theelectrode 138B have a first portion and a second portion with differentthicknesses.

Some embodiments of the present disclosure may obtain accurate result ofmeasurement by utilizing the electrode block 168A with greater area tomeasure the emission signals. In some embodiments, without stripping thefirst electrode layer 168, the formation of the electrode 138A and theelectrode 138B by the aforementioned steps may obtain a common electrode138B with greater area. Therefore, the damage of the stripping processmay be avoided, and better common electrode signal may be obtained.Thus, the production yield of the devices may increase.

Fig.3 is a cross-sectional view of a display device 300 in accordancewith some embodiments. As shown in FIG. 3, the display device 300includes a light-shielding region 174A and a non-light-shielding region174B adjacent to the light-shielding region 174A, and the color filterlayer 152 is disposed in the non-light-shielding region 174B inaccordance with some embodiments.

As shown in FIG. 3, the semiconductor layers 110A and 110B, the gateelectrodes 114A and 114B, the source electrodes 118S1 and 118S2, and thedrain electrodes 118D1 and 118D2 are disposed in the light-shieldingregion 174A, and the light-emitting element 134 is disposed in thenon-light-shielding region 174B in accordance with some embodiments.That is to say, in some embodiments, the transistors 120A and 120B aredisposed in the light-shielding region 174A, and the light-emittingelement 134 is disposed in the non-light-shielding region 174B.

As shown in FIG. 3, the second patterned conductive layer 118 furtherincludes an extension portion 118F, and the drain electrode 118D2 iselectrically connected to the light-emitting element 134 through theextension portion 118F.

In some embodiments, through disposing transistors and light-emittingelements in different regions, the damage to transistors in the step ofbonding light-emitting elements to the transistor layer may be avoided.Therefore, the production yield may increase.

As shown in FIG. 3, along a direction Al that is perpendicular to thetop surface 104A of the substrate 104, the projection of thelight-emitting element 134 on the substrate 104 is not overlapped withthat of the transistor 120A and/or the transistor 120B on the substrate104.

FIG. 4A is a cross-sectional view of a display device 400A in accordancewith some other embodiments. The display device 400A further includes acontrol circuit unit 176 disposed on the bottom surface 104B of thesubstrate 104, and a signal connection portion structure 178 passingthrough the substrate 104.

As shown in FIG. 4A, the signal connection portion structure 178includes a first signal connection portion 178A electrically connectedto the control circuit unit 176 and the source electrode 118S1. Inaddition, in some embodiments, the signal connection portion structure178 further includes a second signal connection portion 178Belectrically connected to the control circuit unit 176 and the gateelectrode 114A and/or the gate electrode 114B.

In more detail, as shown in FIG. 4A, the patterned bottom conductivelayer 106 further includes a third block 106C and a fourth block 106D inaccordance with some embodiments. The first patterned conductive layer114 further includes a conductive block 114D and another conductiveblock 114H, and the second patterned conductive layer 118 furtherincludes an extension portion 118G. Through the first signal connectionportion 178A, the third block 106C, the conductive block 114D and theextension portion 118G, the control circuit unit 176 is electricallyconnected to the source electrode 118S1. The control circuit unit 176may send source signals to the source electrode 118S1 through the firstsignal connection portion 178A. In addition, in other embodiments, thecontrol circuit unit 176 may also send source signals to the sourceelectrode 118S2 through the first signal connection portion 178A.

Referring to FIG. 4A, in some embodiments, the conductive block 114H ofthe first patterned conductive layer 114 is electrically connected tothe gate electrode 114A, and the control circuit unit 176 iselectrically connected to the gate electrode 114A through the secondsignal connection portion 178B, the fourth block 106D and the conductiveblock 114H. Moreover, in other embodiments, the control circuit unit 176may send gate signals to the gate electrode 114A through the secondsignal connection portion 178B.

FIG. 4B is a top view of a display device 400B in accordance with otherembodiments. As shown in FIG. 4B, the first patterned conductive layerincludes multiple gate driving signal lines 114F and multiple gate lines114G (or called scanning lines 114G). The gate lines 114G include theaforementioned gate electrode. The control circuit unit 176 iselectrically connected to the gate electrode of the gate lines 114Gthrough the second signal connection portion 178B, the patterned bottomconductive layer 106 and the gate driving signal lines 114F.

In addition, as shown in FIG. 4B, the second patterned conductive layerincludes multiple scanning lines 118H, and the scanning lines 118Hinclude the source electrode. The control circuit unit 176 iselectrically connected to the source electrode of the scanning lines118H through the first signal connection portion 178A and the patternedbottom conductive layer 106.

By utilizing the signal connection portion structure to electricallyconnect the control circuit unit, the source electrode and the gateelectrode, some embodiments of the present disclosure may eliminate therequired area that the control circuit unit is electrically connect tothe source electrode and the gate electrode through other circuits.Therefore, the area of the device may be reduced further.

FIG. 4C is a cross-sectional view of a display device 400C in accordancewith other embodiments. As shown in Fig.4C, the display device 400C doesnot include the patterned bottom conductive layer 106 and the bufferlayer 108. In some embodiments, the control circuit unit 176 iselectrically connected to the source electrode 118S1 and/or 118S2through the first signal connection portion 178A, the conductive block114D and the extension portion 118G. In some embodiments, the controlcircuit unit 176 is electrically connected to the gate electrode 114Athrough the second signal connection portion 178B and the conductiveblock 114H.

In some embodiments, the aforementioned ACF may be formed by the stepsof the process shown in FIGS. 5A-5G. FIG. 5A is a cross-sectional viewillustrating an imprinting die 500 in one of the steps of the method formanufacturing display devices in accordance with some embodiments. Theimprinting die 500 includes a substrate 502 and a dielectric layer 504disposed on the substrate 502. In some embodiments, the dielectric layer504 may be polymer materials, ceramic materials, other compositematerials, or any other suitable material, for example,polydimethylsiloxane (PDMS), cyclic olefin polymers, or quartz glass.

Referring to FIG. 5A, in some embodiments, a patterned photoresist layer506 may be formed on the dielectric layer 504, and the patternedphotoresist layer 506 has multiple openings 508 exposing the dielectriclayer 504.

Then, referring to FIG. 5B, FIG. 5B is a cross-sectional viewillustrating the imprinting die 500 in one of the steps of the methodfor manufacturing display devices in accordance with some embodiments.The patterned photoresist layer 506 is used as a mask to etch thedielectric layer 504, in order to form multiple notches 510 on thedielectric layer 504. In some embodiments, the notches 510 do not exposethe substrate 502. In some embodiments, as shown in FIG. 5B, multipleprotrusions 512 are formed between multiple notches 510. That is to say,the major surface 5005 of the imprinting die 500 has multipleprotrusions 512 and forms imprinting patterns.

Referring to FIG. 5C, FIG. 5C is a cross-sectional view illustrating theimprinting die 500 in one of the steps of the method for manufacturingdisplay devices in accordance with some embodiments. As shown in FIG.5C, a surface treatment process is performed on the top surface ofmultiple protrusions 512 of the imprinting die 500 in order to form asurface treatment layer 514 on the upper portions of the protrusions 512in accordance with some embodiments. In some embodiments, the surfacetreatment process may include plasma bombardment process, chemicalmodification process, UV-Ozone treatment process, or any other suitableprocess. In some embodiments, the surface treatment layer 514 is aportion of the protrusions 512, and the top surface of the surfacetreatment layer 514 is equivalent to that of the protrusions 512.

Then, referring to FIG. 5D, FIG. 5D is a cross-sectional viewillustrating the imprinting die 500 in one of the steps of the methodfor manufacturing display devices in accordance with some embodiments.As shown in FIG. 5D, a chamber 516 is provided in accordance with someembodiments. An anisotropic conductive solution 518 is placed in thechamber 516. After that, the major surface 500S of the protrusions 512of the imprinting die 500 is immersed into the anisotropic conductivesolution 518 in order to form an anisotropic conductive coating 520 onthe major surface 500S of the protrusions 512 of the imprinting die 500.As shown in FIG. 5E, the anisotropic conductive coating 520 covers thetop surface of the surface treatment layer 514 of the multipleprotrusions 512, and fills into the multiple notches 510 between theprotrusions 512.

Next, referring to FIG. 5F, FIG. 5F is a cross-sectional viewillustrating the imprinting die 500 and the substrate 104 in one of thesteps of the method for manufacturing display devices in accordance withsome embodiments. As shown in FIG. 5F, an imprinting process isperformed on the transistor layer 128 of the substrate 104 by theimprinting die 500 in order to imprint the anisotropic conductivecoating 520 on the protrusions 512 on the transistor layer 128, and formthe patterned ACF 132 over the transistor layer 128, as shown in FIG.5G.

In some embodiments, the imprinting strength of the imprinting processis in a range from about 10N to about 1500N, such as from about 100N toabout 1000N, or from about 500N to about 800N. In the event that theimprinting strength is too small, for example, less than 10N, theanisotropic conductive coating 520 may not be effectively imprinted tothe transistor layer 128. However, if the imprinting strength is toobig, for example, greater than 1500N, the device may be damaged.

In addition, as shown in FIG. 5G, the anisotropic conductive coating 520that fills into the notches 510 between the multiple protrusions 512 arenot imprinted to the transistor layer 128. Therefore, in someembodiments, the aforementioned imprinting process imprints theanisotropic conductive coating 520 on the protrusions 512 to thetransistor layer 128, and may form the patterned ACF 132 on thetransistor layer 128. As shown in FIG. 5G, the patterned ACF 132includes multiple anisotropic conductive blocks 132A in accordance withsome embodiments. In some embodiments, each of the anisotropicconductive blocks 132A is disposed corresponding to one sub-pixelregion.

In some embodiments, the production cost may reduce by forming thepatterned ACF 132 in comparison with forming full layer of ACF.

FIG. 6A is a cross-sectional view illustrating the spray coatingequipment 600 and the substrate 104 with the transistor layer 128 in oneof the steps of the method for manufacturing display devices inaccordance with other embodiments. As shown in FIG. 6A, there is one ormore patterned ACF predetermined coating region 132P on the transistorlayer 128, corresponding to the patterns predetermined forming thepatterned ACF 132.

Next, spray coating equipment 600 is provided. The spray coatingequipment 600 includes a substrate 602, a control circuit board 604 anda spray coating portion 606. As shown in FIG. 6A, the substrate 602 andthe control circuit board 604 are connected through a conductiveconnection portion 608, and the substrate 602 and the spray coatingportion 606 are connected through another conductive connection portion610. A conductive layer 612 is disposed inside of the substrate 602, andelectrically connected to the corresponding conductive connectionportions 608 and 610.

Referring to FIG. 6A, in some embodiments, the spray coating portion 606includes multiple chambers 614 where an anisotropic conductive solution616 is placed. A motor 618 is disposed on each of the chambers 614. Insome embodiments, the motors 618 are step motors, for example. Referringto FIG. 6A, the spray coating portion 606 of the spray coating equipment600 has multiple spray nozzles 620. Each of the spray nozzles 620corresponds to one chamber 614, and has an opening 622. Referring toFIG. 6A, each of the motors 618 is connected to a cylinder 624 thatpasses through the chamber 614 and the anisotropic conductive solution616 and enters the opening 622.

Referring to FIG. 6A, the multiple spray nozzles 620 are towards thetransistor layer 128. In some embodiments, the one or more spray nozzle620 is aligned with the one or more patterned ACF predetermined coatingregion 132P.

Next, referring to FIGS. 6B-6C, in order to form the patterned ACF 132,the one or more patterned ACF predetermined coating region 132P iscoated with the anisotropic conductive solution 616 by the one or morespray nozzle 620, which is aligned with the one or more patterned ACFpredetermined coating region 132P.

In more detail, referring to FIG. 6B, the cylinders 624 are extendeddownwards approaching the transistor layer 128 by the motors 618. Thecylinders 624 may either not contact with the transistor layer 128 ordirectly contact with the transistor layer 128. Then, the anisotropicconductive solution 616 flows downwards along the cylinders 624 andcoats on the patterned ACF predetermined coating region 132P.

Next, referring to FIG. 6C, the cylinders 624 retract upwards, and thepatterned ACF 132 is formed on the transistor layer 128. In someembodiments, forming the patterned ACF 132 may reduce the process costin comparison with forming a full layer ACF.

In some embodiments, the light-emitting elements of the presentdisclosure may be placed over the transistor layer by the methods asfollows.

First, a pickup device is provided. FIG. 7A is a top view of a pickupdevice 700A in accordance with some embodiments. As shown in FIG. 7A,the pickup device 700A includes multiple gate lines 702 and data lines704 disposed on a substrate 701, and pickup units 706 disposed on thesubstrate 701 and between two gate lines 702 and two data lines 704 inaccordance with some embodiments.

In some embodiments, the pickup device 700A inputs signals at the gatelines 702 in turn, and it controls each of the pickup units 706 as towhether to pick up a light-emitting element by controlling the signalsof the data lines 704.

FIG. 7B is a cross-sectional view of a pickup unit 706B in accordancewith some embodiments. As shown in FIG. 7B, the pickup unit 706Bincludes a gate electrode 702A disposed on the substrate 701, and a gatedielectric layer 707 disposed on the gate electrode 702A.

The gate electrode 702A may be amorphous silicon, polysilicon, one ormore metal, metal nitride, conductive metal oxide, or a combinationthereof. The metal may include but not be limited to molybdenum,tungsten, titanium, tantalum, platinum, or hafnium. The metal nitridemay include but not be limited to molybdenum nitride, tungsten nitride,titanium nitride, and tantalum nitride. The conductive metal oxide mayinclude but not be limited to ruthenium oxide and indium tin oxide. Thegate electrode 702A may be formed by the aforementioned CVD, sputteringdeposition, resistance heating evaporation, electron beam evaporation,or any other suitable deposition method. For example, in an embodiment,an amorphous silicon conductive material layer or a polysiliconconductive material layer may be obtained by LPCVD depositing in atemperature between 525° C.-650° C. The thickness may be in a range fromabout 1000 Å to about 10000 Å.

The gate dielectric layer 707 may be silicon oxide, silicon nitride,silicon oxynitride, high-k dielectric materials, any other suitabledielectric material, or a combination thereof. The high-k dielectricmaterials may be metal oxides, metal nitrides, metal silicides,transition metal oxides, transition metal nitrides, transition metalsilicides, metal oxynitrides, metal aluminates, zirconium silicate,zirconium aluminate. For example, the high-k dielectric materials may beLaO, AlO, ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO) , BaZrO,HfO₂, HfO₃, HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfSiO,HfTaTiO, HfAlON, (Ba,Sr) TiO₃ (BST), Al₂O₃, another suitable high-kdielectric materials, or a combination thereof. The gate dielectriclayer 707 may be formed by CVD or spin-on coating. The CVD may be, forexample, LPCVD, LTCVD, RTCVD, PECVD, ALD, or another commonly usedmethod.

As shown in FIG. 7B, the pickup unit 706B further includes asemiconductor layer 708 disposed on the gate dielectric layer 707. Thesemiconductor layer 708 is disposed corresponding to the gate electrode702A. A source electrode 704A and a drain electrode 710 are respectivelydisposed on the opposite sides of the semiconductor layer 708, andpartially overlapped with the portions of the semiconductor layer 708 atthe opposite sides.

The semiconductor layer 708 may include elemental semiconductorsincluding silicon and germanium, compound semiconductors includinggallium nitride (GaN), silicon carbide, gallium arsenide, galliumphosphide, indium phosphide, indium arsenide and/or indium antimonide,alloy semiconductors including SiGe, GaAsP, AlInAs, AlGaAs, GalnAs,GaInP and/or GaInAsP, or a combination thereof.

The materials of the source electrode 704A and the drain electrode 710may include Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof,a combination thereof, or another metal material with good conductivity.In other embodiments, the material of the source electrode 704A and thedrain electrode 710 may be a non-metal material, as long as the materialused has conductivity. The material of the source electrode 704A and thedrain electrode 710 may be formed by the aforementioned CVD, sputteringdeposition, resistance heating evaporation, electron beam evaporation,or any other suitable deposition method. In some embodiments, thematerial of the source electrode 704A and the drain electrode 710 may bethe same and formed by the same deposition process. However, in otherembodiments, the source electrode 704A and the drain electrode 710 maybe formed by different deposition processes, and the materials used maybe different from each other.

As shown in FIG. 7B, the pickup unit 706B further includes an insulatinglayer 712 covering the semiconductor layer 708, the source electrode704A and the drain electrode 710. The insulating layer 712 may besilicon nitride, silicon dioxide, or silicon oxynitride. The insulatinglayer 712 may be formed by CVD or spin-on coating. The CVD may be, forexample, LPCVD, LTCVD, RTCVD, PECVD, ALD, or another commonly usedmethod.

Next, an insulating layer 714 may be selectively disposed on theinsulating layer 712. The material of the insulating layer 714 may beorganic insulating materials (photosensitive resin) or inorganicinsulating materials (silicon nitride, silicon oxide, siliconoxynitride, silicon carbide, aluminum oxide, or a combination thereof).As shown in FIG. 7B, the insulating layer 714 is deposited on theinsulating layer 712 in a carpet covering manner in accordance with someembodiments.

Referring to FIG. 7B, in some embodiments, the pickup unit 706B furtherincludes an electrode 716 disposed on the insulating layers 712 and 714,and the electrode 716 is electrically connected to the drain electrode710.

In some embodiments, the material of the electrode 716 may include Cu,Al, Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof, a combinationthereof, or another metal material with good conductivity. In otherembodiments, the material of the electrode 716 may be a non-metalmaterial, as long as the material used has conductivity. In someembodiments, the material of the electrode 716 may be formed by theaforementioned CVD, sputtering deposition, resistance heatingevaporation, electron beam evaporation, or any other suitable depositionmethod.

Referring to FIG. 7B, in some embodiments, the pickup unit 706B furtherincludes an insulating layer 718 disposed on the electrode 716.

The insulating layer 718 may be silicon oxide, silicon nitride, siliconoxynitride, high-k dielectric materials, any other suitable dielectricmaterial, or a combination thereof. The high-k dielectric materials maybe metal oxides, metal nitrides, metal silicides, transition metaloxides, transition metal nitrides, transition metal silicides, metaloxynitrides, metal aluminates, zirconium silicate, zirconium aluminate.For example, the high-k dielectric materials may be LaO, AlO, ZrO, TiO,Ta₂O₅, Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO, HfO₂, HfO₃, HfZrO,HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfTiO, HfTaTiO, HfAlON,(Ba,Sr) TiO₃ (BST), Al₂O₃, another suitable high-k dielectric material,or a combination thereof. The insulating layer 718 may be formed by CVDor spin-on coating.

FIG. 7C is a cross-sectional view of a pickup unit 706C in accordancewith other embodiments. As shown in FIG. 7C, the insulating layer 714 isa bump in accordance with some embodiments. In some embodiments, thepickup unit 706B further includes an insulating layer 720 disposed onthe insulating layer 714. In some embodiments, the insulating layer 720may be silicon nitride, silicon dioxide, silicon oxynitride, or anyother suitable insulating material. In some embodiments, the insulatinglayer 720 may be formed by the aforementioned CVD, spin-on coating, orany other suitable method. As shown in FIG. 7C, the insulating layers716 and 718 are conformally disposed on the insulating layers 714 and720 in accordance with some embodiments.

FIG. 7D is a cross-sectional view of a pickup device 700D and thelight-emitting element 134 in accordance with other embodiments. Thepickup device 700D includes two pickup units 706D1 and 706D2. The pickupunits 706D1 and 706D2 may be controlled regarding whether to pick up thelight-emitting element 134 by controlling the signals of gate lines anddata lines. For example, as shown in FIG. 7D, the pickup unit 706D1picks up the light-emitting element 134 on a carrier substrate 722, andthe pickup unit 706D2 does not pick up the light-emitting element 134 inaccordance with other embodiments.

FIG. 7E is a top view of a pickup device 700E in accordance with otherembodiments. As shown in FIG. 7E, two pickup units 706 are disposedbetween two gate lines 702 and two data lines 704 in accordance withother embodiments. The pickup device 700F inputs signals at the gatelines 702 in turn, and it controls each of the pickup units 706regarding whether to pick up a light-emitting element by controlling thesignals of the data lines 704.

FIG. 7F is a top view of a pickup device 700F in accordance with otherembodiments. As shown in FIG. 7F, each of the gate lines 702 iselectrically connected to one of the pickup units 706, and each of thepickup units 706 may be controlled regarding whether to pick up alight-emitting element by controlling the signals of the gate lines 702and the data lines 704 in accordance with other embodiments.

FIG. 7G is a top view of a pickup device 700G in accordance with otherembodiments. As shown in FIG. 7, each of the pickup units 706 iselectrically connected to one of the gate lines 702 and one of the datalines 704, and each of the pickup units 706 may be controlled as towhether to pick up a light-emitting element by controlling the signalsof the gate lines 702 and the data lines 704 in accordance with otherembodiments.

In some embodiments, light-emitting elements may be placed over thetransistor layer by the methods shown in FIGS. 8A-8C as follows. FIGS.8A-8C are top views of the carrier substrate and the transistor layer128 illustrating one of the steps of the method for manufacturing thedisplay device in accordance with some embodiments. As shown in FIG. 8A,multiple sub-pixel regions 802 are included on the transistor layer 128,and each of the sub-pixel regions 802 has two light-emitting elementpredetermined disposing regions 134P in accordance with someembodiments.

Then, as shown in FIG. 8B, a carrier substrate 804 is provided inaccordance with some embodiments. Multiple light-emitting elements 134are disposed on the carrier substrate 804, and each of thelight-emitting elements 134 corresponds to one of the light-emittingelement predetermined disposing regions 134P on the transistor layer128. Next, a test may be performed on the multiple light-emittingelements 134 on the carrier substrate 804.

Then, as shown in FIG. 8C, the one or more light-emitting element 134that passes the test is selectively picked up by the aforementionedpickup device (i.e. the pickup device 700A, 700E, 700F, or 700G), andthe light-emitting elements 134 that pass the test are disposed on thetransistor layer 128 corresponding to the light-emitting elementpredetermined disposing regions 134P in accordance with someembodiments.

The light-emitting elements are placed on the transistor layer by themethods as described above in some embodiments, and that may avoiddisposing the light-emitting elements 134 that do not pass the test onthe transistor layer. Therefore, the process for repairinglight-emitting elements 134 that do not pass the test and disposed onthe transistor layer may be omitted. Thus, the production cost may bereduced.

In some other embodiments, light-emitting elements may be placed on thetransistor layer by the methods shown in FIGS. 9A-9D as follows. FIGS.9A-9B are top views of the carrier substrate and the transistor layer128 illustrating one of the steps of the method for manufacturing thedisplay device in accordance with some embodiments. As shown in FIG. 9A,multiple sub-pixel regions 902 are included on the transistor layer 128,and each of the sub-pixel regions 902 has one light-emitting elementpredetermined disposing region 134P in accordance with some embodiments.

Next, as shown in FIG. 9B, a carrier substrate 904 is provided. Multiplelight-emitting elements 134 are disposed on the carrier substrate 904,and each of the light-emitting elements 134 corresponds to one of thelight-emitting element predetermined disposing regions 134P on thetransistor layer 128. Next, a test may be performed on the multiplelight-emitting elements 134 on the carrier substrate 904 in accordancewith some embodiments.

Then, as shown in FIG. 9C, the one or more light-emitting element 134that passes the test is selectively picked up by the aforementionedpickup device (i.e. the pickup device 700A, 700E, 700F, or 700G), andthe light-emitting elements 134 that pass the test are disposed on thetransistor layer 128 corresponding to the light-emitting elementpredetermined disposing regions 134P in accordance with someembodiments.

It should be noted that as shown in FIG. 9C, no light-emitting elementis disposed on the light-emitting element predetermined disposingregions 134P (for example, the light-emitting element predetermineddisposing region 134P1) corresponding to one or more light-emittingelements 134 that do not pass the test.

Next, as shown in FIG. 9D, another one or more light-emitting element934 that passes the test is picked up and disposed at the one or morelight-emitting element predetermined disposing region 134P1corresponding to the one or more light-emitting elements 134 that do notpass the test.

The light-emitting elements are placed on the transistor layer by themethods as described above in some embodiments, and that may avoiddisposing the light-emitting elements that do not pass the test on thetransistor layer. Therefore, the process for repairing light-emittingelements that do not pass the test and is disposed on the transistorlayer may be omitted. Thus, the production cost may be reduced.

In some embodiments, light-emitting elements may be placed on thetransistor layer by the methods shown in FIGS. 10A-10C as follows. FIGS.10A is a side view illustrating the pickup device, the carrier substrateand the transistor layer in one of the steps of the method formanufacturing the display device in accordance with some embodiments. Asshown in FIG. 10A, multiple light-emitting element predetermineddisposing regions 134P are included on the transistor layer 128 inaccordance with some embodiments.

Moreover, as shown in FIG. 10A, a carrier substrate 1004 is provided inaccordance with some embodiments. Multiple light-emitting elements 134are disposed on the carrier substrate 1004, and the multiplelight-emitting elements 134 respectively corresponds to the multiplelight-emitting element predetermined disposing regions 134P.

As shown in FIG. 10A, a pickup device 1006 is provided in accordancewith some embodiments. The pickup device 1006 includes multiple pickupunits 1008, and each of the multiple pickup units 1008 includes acalibration unit 1010 and a pickup head 1012 connected to thecalibration unit 1010. In some embodiments, the calibration unit 1010includes a piezoelectric material.

Next, as shown in FIG. 10B, one or more light-emitting elements 134 arepicked up by the pickup head 1012 of the pickup device 1006 inaccordance with some embodiments. The one or more light-emitting element134 which is picked up is placed at the position substantiallycorresponding to the light-emitting element predetermined disposingregion 134P.

Then, as shown in FIG. 10C, a voltage is applied to the calibration unit1010 in order to change the size of the calibration unit 1010, so thatthe pickup head 1012 and the light-emitting element 134 are moved orrotated, and the light-emitting element 134 is aligned with thelight-emitting element predetermined disposing regions 134P.

In some embodiments, as shown in FIG. 10C, the calibration unit 1010 hasa rotating axis 1010C and three moving axes 1010X, 1010Y and 1010Z inaccordance with some embodiments. As shown in FIG. 10C, the calibrationunit 1010 may rotate clockwise or counterclockwise as the rotating axis1010C is the axle center, or the calibration unit 1010 may move alongthe moving axes 1010X, 1010Y and 1010Z.

In some embodiments, light-emitting elements may be placed on thetransistor layer by the methods shown in FIGS. 11A-11C as follows. FIG.11A is a side view illustrating the carrier substrate in one of thesteps of the method for manufacturing the display device in accordancewith some embodiments. As shown in FIG. 11A, a carrier substrate 1104 isprovided in accordance with some embodiments. Multiple light-emittingelements 134 are disposed on the carrier substrate 1104, and each of thelight-emitting elements 134 corresponds to one subsequent light-emittingelement predetermined disposing region 134P.

Next, as shown in FIG. 11B, a pickup device 1106 is provided inaccordance with some embodiments. The pickup device 1106 includes apiezoelectric unit matrix 1108, and the piezoelectric unit matrix 1108has multiple piezoelectric units 1110. Then, the light-emitting elements134 are picked up by the pickup device 1106, and each of thelight-emitting elements 134 corresponds to one of the piezoelectricunits 1110.

Next, as shown in FIG. 11B, a transistor layer 128 is provided inaccordance with some embodiments. The transistor layer 128 includesmultiple light-emitting element predetermined disposing regions 134Pthereon, and each of the light-emitting elements 134 on the pickupdevice 1106 substantially corresponds to the position of one of thelight-emitting element predetermined disposing regions 134P.

Then, as shown in FIG. 11B, a voltage is applied to one or morepiezoelectric unit 1110 in order to change the size of the one or morepiezoelectric unit 1110, and the one or more light-emitting element 134disposed corresponding to the one or more piezoelectric unit 1110 ismoved or rotated, so that the light-emitting element 134 is aligned withthe corresponding light-emitting element predetermined disposing regions134P in accordance with some embodiments.

Next, as shown in FIG. 11C, the light-emitting elements 134 on thepickup device 1106 are placed on the transistor layer 128 correspondingto the light-emitting element predetermined disposing regions 134P inaccordance with some embodiments.

In some embodiments, light-emitting elements are placed on theanisotropic conductive blocks on the transistor layer by the methodsshown in FIG. 12A as follows, and the anisotropic conductive blocks thatthe light-emitting elements are disposed on are hardened.

FIG. 12A is a cross-sectional view illustrating a pickup device 1200Aand the substrate 104 in one of the steps of the methods formanufacturing the display devices in accordance with some embodiments.As shown in FIG. 12A, there is a patterned ACF 132 on the transistorlayer 128. The patterned ACF 132 has one or more anisotropic conductiveblock 132A.

Next, a pickup device 1200A is provided. The pickup device 1200Aincludes a substrate 1202, a control circuit board 1204 and a pickupportion 1206. As shown in FIG. 12A, the substrate 1202 and the controlcircuit board 1204 are connected through a conductive connection portion1208, and the substrate 1202 and the pickup portion 1206 are connectedthrough another conductive connection portion 1210. A conductive layer1212 is disposed inside the substrate 1202 and electrically connected tothe corresponding conductive connection portions 1208 and 1210.

Referring to FIG. 12A, in some embodiments, the pickup portion 1206includes a chamber 1214. In some embodiments, the chamber 1214 may be avacuum chamber.

Referring to FIG. 12A, in some embodiments, the pickup portion 1206includes multiple pickup units 1216, and each of the pickup units 1216includes a pickup head 1218 and a clog 1220 disposed corresponding tothe pickup head 1218. In addition, the pickup units 1216 include motors1222 controlling the clogs 1220. The pickup heads 1218 may be controlledas to whether to pick up light-emitting elements by controlling themotors 1222 and the clogs 1220.

Referring to FIG. 12A, in some embodiments, the pickup units 1216include light-emitting units 1224 disposed adjacent to the pickup heads1218. The light-emitting units 1224 may emit UV light or any other lightthat may harden the anisotropic conductive blocks 132A.

Then, as shown in FIG. 12A, the light-emitting elements 134 are pickedup by the pickup head 1218 of at least one pickup unit 1216, and placedon the anisotropic conductive blocks 132A in some embodiments.

Referring to FIG. 12A, in some embodiments, having the light-emittingelements 1224 emit light 1226 to irradiate the anisotropic conductiveblocks 132A that the light-emitting elements 134 are disposed on is inorder to harden the anisotropic conductive blocks 132A.

The flexibility of the process may increase by selectively hardening theanisotropic conductive blocks 132A that the light-emitting elements 134are disposed on in some embodiments.

FIG. 12B is a cross-sectional view illustrating a pickup device 1200Band the substrate 104 in one of the steps of the methods formanufacturing the display devices in accordance with some embodiments.As shown in FIG. 12B, the pickup units 1216 of the pickup device 1200Binclude heating units 1228 disposed adjacent to the pickup heads 1218.

Next, as shown in FIG. 12B, the light-emitting elements 134 are pickedup by the pickup heads 1218 of at least one pickup unit 1216, and placedon the anisotropic conductive blocks 132A in some embodiments.

In some embodiments, before hardening the anisotropic conductive blocks132A, the substrate 104 and the anisotropic conductive blocks 132A arepreheated to a predetermined temperature that may be substantially 10°C.-30° C. lower than the hardening temperature of the anisotropicconductive blocks 132A, such as substantially 15° C.-25° C. lower, orabout 20° C. lower. However, in other embodiments, the substrate 104 andthe anisotropic conductive blocks 132A are not preheated.

Then, as shown in FIG. 12B, having the heating units 1228 heat theanisotropic conductive blocks 132A that the light-emitting elements 134are disposed on makes the temperature of the anisotropic conductiveblocks 132A is greater than or equivalent to the hardening temperatureof the anisotropic conductive blocks 132A in some embodiments. Thus, theanisotropic conductive blocks 132A are hardened.

In some embodiments, the anisotropic conductive blocks that thelight-emitting elements are disposed on are hardened by the method shownin FIGS. 13A-13E-2 as follows. FIG. 13A is a top view of a displaydevice 1300 in accordance with other embodiments. As shown in FIG. 13A,the display device 1300 includes multiple gate lines 1302 and multipledata lines 1304, and a shielding pattern 1306 is disposed thereon toshield the multiple gate lines 1302 and multiple data lines 1304. Thedisplay device 1300 further includes multiple sub-pixel regions 1308.

FIG. 13B is a top view of a sub-pixel region 1308 in accordance withsome embodiments. FIG. 13C is a cross-sectional view of the displaydevice 1300 in accordance with some embodiments. As shown in FIGS.13A-13C, before forming the patterned ACF 132, patterned resistancewires 1310 disposed corresponding to the sub-pixel regions 1308 areformed on the transistor layer 128 of the sub-pixel regions 1308.

In some embodiments, the material of the patterned resistance wires 1310may include transparent conductive materials, for example, ITO, SnO,IZO, IGZO, ITZO, ATO, AZO, a combination thereof, or any other suitabletransparent conductive oxide material. The material of the patternedresistance wires 1310 may be formed by the aforementioned CVD,sputtering deposition, resistance heating evaporation, electron beamevaporation, or any other suitable deposition method.

Next, as shown in FIG. 13C, an insulating layer 1312 is disposed on thepatterned resistance wires 1310, and a wire 1314 is disposed on theinsulating layer 1312 in accordance with some embodiments. In someembodiments, the wire 1314 is electrically connected to the patternedresistance wires 1310 through a via 1316. In some embodiments, the wire1314 is a portion of a patterned conductive layer, and the patternedconductive layer includes multiple wires 1314. In some embodiments, thepatterned conductive layer may be, for example, the aforementioned thirdpatterned conductive layer.

In some embodiments, the insulating layer 1312 may be silicon nitride,silicon dioxide, silicon oxynitride, or any other suitable insulatingmaterial. In some embodiments, the insulating layer 1312 may be formedby the aforementioned CVD, spin-on coating, or any other suitablemethod.

In some embodiments, the material of the wires 1314 may include Cu, Al,Mo, W, Au, Cr, Ni, Pt, Ti, Ir, Rh, an alloy thereof, a combinationthereof, or another metal material with good conductivity. In otherembodiments, the material of the wires 1314 may be a non-metal material,as long as the material used has conductivity. In some embodiments, thematerial of the wires 1314 may be formed by the aforementioned CVD,sputtering deposition, resistance heating evaporation, electron beamevaporation, or any other suitable deposition method.

Next, as shown in FIG. 13A, the patterned ACF 132 is formed inaccordance with some embodiments. The patterned ACF 132 has at least oneanisotropic conductive block 132A disposed corresponding to thesub-pixel region 1308. In some embodiments, the patterned ACF 132 isdisposed on the transistor layer 128, and the patterned resistance wires1310 and the wires 1314 are disposed between the transistor layer 128and the patterned ACF 132.

In some embodiments, after forming the patterned ACF 132, light-emittingelements (not shown) may be disposed on the anisotropic conductiveblocks 132A corresponding to the sub-pixel regions 1308.

Then, through the wires 1314, the patterned resistance wires areelectrified to heat and harden the anisotropic conductive blocks 132Athat the light-emitting elements 134 are disposed on.

In some embodiments, the total length of the patterned resistance wires1310 disposed in one sub-pixel region 1308 is in a range from about 1 μmto about 100 μm, such as from about 10 μm to about 80 μm, or from about30 μm to about 50 μm. In some embodiments, the width of the patternedresistance wires 1310 is in a range from about 50 nm to about 50 μm,such as from about 100 nm to about 10 μm, or from about 500 nm to about1 μm.

FIG. 13D-1 is a top view of the display device 1300 in accordance withother embodiments. FIG. 13D-2 is an enlarged view of the region 1340 ofFIG. 13D-1. As shown in FIGS. 13D-1 and 13D-2, the display device 1300includes a display region 1318 and a peripheral region 1320. A cuttingline 1322 surrounding the display region is disposed in the peripheralregion 1320. As shown in FIGS. 13D-1 and 13D-2, the cutting line 1322divides the peripheral region 1320 into an outer portion 1320A away fromthe display region 1318 and an inner portion 1320B adjacent to thedisplay region 1318. Multiple conductive pads are disposed in the outerportion 1320A of the peripheral region 1320, and multiple transistorcircuits 1326 are disposed in the inner portion 1320B of the peripheralregion 1320. The gate of each of the transistor circuits 1326 isconnected to one conductive pad 1324, the source thereof is connected tothe wires 1314, and the drain thereof is connected to the operatingvoltage. The wires 1314 are controlled regarding whether to inputelectronic current via the transistor circuits 1326.

FIG. 13E-1 is a top view of the display device 1300 in accordance withother embodiments. FIG. 13E-2 is an enlarged view of the region 1342 ofFIG. 13E-1. As shown in FIGS. 13E-1 and 13E-2, multiple conductive pads1328 are disposed in the outer portion 1320A of the peripheral region1320, and multiple transistor circuits 1330 are disposed in the innerportion 1320B of the peripheral region 1320. The gate of each of thetransistor circuits 1330 is connected to one conductive pad 1328, thesource is connected to the patterned resistance wires 1310, and thedrain is connected to ground. The patterned resistance wires 1310 arecontrolled as to whether an electronic current is input via thetransistor circuits 1330.

As described above, according to some embodiments of the presentdisclosure, in the display device, a capacitor is formed by the pixelelectrode disposed on the transistor layer and the conductive connectionportion in the transistor layer to improve the display quality of thedisplay device.

In addition, it should be noted that those skilled in the art willappreciate that the source and drain may be exchanged in the embodimentsof the present disclosure because the definition of that is relative tothe voltage levels connected to them.

It should be noted that the aforementioned sizes, parameters and shapesof the elements are not limitations of the present disclosure. Thoseskilled in the art may adjust these settings according to differentneeds. Moreover, the substrates, display devices and the methods formanufacturing the same are not limited to the configurations shown inFIGS. 1A-13E. Some embodiments of the present disclosure may justinclude any one or more features of any one or more embodiment of FIGS.1A-13E. That is to say, not every feature of all the drawings isperformed in the substrates, display devices and the methods formanufacturing the same of the present disclosure.

While the invention has been described by way of example and in terms ofpreferred embodiment, it is to be understood that those skilled in theart may make various changes, substitutions, and alterations to theinvention without departing from the spirit and scope of the presentdisclosure. In addition, the scope of the present disclosure is notlimited to the process, machines, manufacture, composition, devices,methods and steps in the specific embodiments described in thespecification. Those skilled in the art may understand existing ordeveloping process, machines, manufacture, composition, devices, methodsand steps from some embodiments of the present disclosure, as long asmay be performed in the aforementioned embodiments and obtainsubstantially the same result may be used in accordance with someembodiments of the present disclosure. Therefore, the scope of thepresent disclosure includes the aforementioned processes, machines,manufacture, composition, devices, methods and steps. Furthermore, eachof the appended claims constructs an individual embodiment, and thescope of the present disclosure also includes every combination of theappended claims and embodiments.

What is claimed is:
 1. A display device, comprising: a substrate havinga top surface; a light-emitting element disposed on the substrate, thelight-emitting element comprising a first electrode and a secondelectrode; and a transistor disposed on the substrate and electricallyconnected to the light-emitting element, the transistor comprising: agate electrode; and a semiconductor layer comprising an overlappingportion overlapped with the gate electrode; wherein the first electrodeand the second electrode of the light-emitting element do not overlapwith the overlapping portion along a direction perpendicular to the topsurface of the substrate.
 2. The display device of claim 1, furthercomprising an insulating layer disposed on the substrate and having arecess, wherein the light-emitting element is disposed in the recess. 3.The display device of claim 1, wherein the light-emitting elementcomprises a semiconductor layer, and the first electrode and the secondelectrode are disposed on the same side of the semiconductor layer. 4.The display device of claim 1, wherein the transistor comprises a drainelectrode electrically connected to the light-emitting element.
 5. Thedisplay device of claim 1, further comprising a light conversion layerdisposed on the light-emitting element.
 6. The display device of claim5, wherein the light conversion layer does not overlap with theoverlapping portion.
 7. The display device of claim 1, furthercomprising a color filter layer disposed on the light-emitting element.8. The display device of claim 7, wherein the color filter layer doesnot overlap with the overlapping portion.
 9. The display device of claim7, further comprising a light conversion layer disposed on thelight-emitting element, wherein the color filter layer is disposed onthe light conversion layer.
 10. The display device of claim 9, wherein awidth of the color filter layer is greater than a width of the lightconversion layer.
 11. The display device of claim 9, further comprisingan insulating layer disposed on the substrate and having a recess,wherein the light-emitting element is disposed in the recess, and thecolor filter layer and the light conversion layer overlap with therecess.
 12. The display device of claim 7, wherein the color filterlayer has a trapezoidal structure in a cross-sectional view.
 13. Thedisplay device of claim 7, wherein the color filter layer partiallyoverlaps the semiconductor layer of the transistor along the directionperpendicular to the top surface of the substrate.
 14. The displaydevice of claim 7, further comprising a light-shielding layer disposedadjacent to the color filter layer, wherein the light-shielding layeroverlaps with
 15. The display device of claim 1, further comprising apad disposed between the light-emitting element and the substrate. 16.The display device of claim 15, further comprising an insulating layerdisposed on the transistor, the insulating layer having a recess,wherein the light-emitting element and the pad are disposed in therecess.
 17. The display device of claim 15, wherein the pad does notoverlap with the overlapping portion.
 18. The display device of claim 1,wherein the light-emitting element comprises an active layer, one of thefirst electrode or the second electrode overlap with the active layeralong the direction perpendicular to the top surface of the substrate,and the other of the first electrode or the second electrode does notoverlap with the active layer along the direction perpendicular to thetop surface of the substrate.